All-nitride Al(x)Ga(1−x)N:Mn/GaN distributed Bragg reflectors for the near-infrared

Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. Whi...

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Detalles Bibliográficos
Autores principales: Capuzzo, Giulia, Kysylychyn, Dmytro, Adhikari, Rajdeep, Li, Tian, Faina, Bogdan, Tarazaga Martín-Luengo, Aitana, Bonanni, Alberta
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5309887/
https://www.ncbi.nlm.nih.gov/pubmed/28198432
http://dx.doi.org/10.1038/srep42697

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5309887/
https://www.ncbi.nlm.nih.gov/pubmed/28198432
http://dx.doi.org/10.1038/srep42697

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