All-nitride Al(x)Ga(1−x)N:Mn/GaN distributed Bragg reflectors for the near-infrared

Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. Whi...

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Autores principales: Capuzzo, Giulia, Kysylychyn, Dmytro, Adhikari, Rajdeep, Li, Tian, Faina, Bogdan, Tarazaga Martín-Luengo, Aitana, Bonanni, Alberta
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5309887/
https://www.ncbi.nlm.nih.gov/pubmed/28198432
http://dx.doi.org/10.1038/srep42697
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author Capuzzo, Giulia
Kysylychyn, Dmytro
Adhikari, Rajdeep
Li, Tian
Faina, Bogdan
Tarazaga Martín-Luengo, Aitana
Bonanni, Alberta
author_facet Capuzzo, Giulia
Kysylychyn, Dmytro
Adhikari, Rajdeep
Li, Tian
Faina, Bogdan
Tarazaga Martín-Luengo, Aitana
Bonanni, Alberta
author_sort Capuzzo, Giulia
collection PubMed
description Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. While III-nitride optoelectronics in the visible and ultraviolet spectral range is widely established, all-nitride efficient devices in the near-infrared (NIR) are still wanted. Here, through a comprehensive protocol of design, modeling, epitaxial growth and in-depth characterization, we develop Al(x)Ga(1−x)N:Mn/GaN NIR distributed Bragg reflectors and we show their efficiency in combination with GaN:(Mn,Mg) layers containing Mn-Mg(k) complexes optically active in the near-infrared range of wavelengths.
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spelling pubmed-53098872017-02-22 All-nitride Al(x)Ga(1−x)N:Mn/GaN distributed Bragg reflectors for the near-infrared Capuzzo, Giulia Kysylychyn, Dmytro Adhikari, Rajdeep Li, Tian Faina, Bogdan Tarazaga Martín-Luengo, Aitana Bonanni, Alberta Sci Rep Article Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. While III-nitride optoelectronics in the visible and ultraviolet spectral range is widely established, all-nitride efficient devices in the near-infrared (NIR) are still wanted. Here, through a comprehensive protocol of design, modeling, epitaxial growth and in-depth characterization, we develop Al(x)Ga(1−x)N:Mn/GaN NIR distributed Bragg reflectors and we show their efficiency in combination with GaN:(Mn,Mg) layers containing Mn-Mg(k) complexes optically active in the near-infrared range of wavelengths. Nature Publishing Group 2017-02-15 /pmc/articles/PMC5309887/ /pubmed/28198432 http://dx.doi.org/10.1038/srep42697 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Capuzzo, Giulia
Kysylychyn, Dmytro
Adhikari, Rajdeep
Li, Tian
Faina, Bogdan
Tarazaga Martín-Luengo, Aitana
Bonanni, Alberta
All-nitride Al(x)Ga(1−x)N:Mn/GaN distributed Bragg reflectors for the near-infrared
title All-nitride Al(x)Ga(1−x)N:Mn/GaN distributed Bragg reflectors for the near-infrared
title_full All-nitride Al(x)Ga(1−x)N:Mn/GaN distributed Bragg reflectors for the near-infrared
title_fullStr All-nitride Al(x)Ga(1−x)N:Mn/GaN distributed Bragg reflectors for the near-infrared
title_full_unstemmed All-nitride Al(x)Ga(1−x)N:Mn/GaN distributed Bragg reflectors for the near-infrared
title_short All-nitride Al(x)Ga(1−x)N:Mn/GaN distributed Bragg reflectors for the near-infrared
title_sort all-nitride al(x)ga(1−x)n:mn/gan distributed bragg reflectors for the near-infrared
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5309887/
https://www.ncbi.nlm.nih.gov/pubmed/28198432
http://dx.doi.org/10.1038/srep42697
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