Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta(2)O(5)/HfO(2-x)/Hf Stack

In this study, we present a bilayer resistive switching memory device with Pt/Ta(2)O(5)/HfO(2-x)/Hf structure, which shows sub-1 μA ultralow operating current, median switching voltage, adequate ON/OFF ratio, and simultaneously containing excellent self-rectifying characteristics. The control sample...

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Detalles Bibliográficos
Autores principales: Ma, Haili, Feng, Jie, Lv, Hangbing, Gao, Tian, Xu, Xiaoxin, Luo, Qing, Gong, Tiancheng, Yuan, Peng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5311009/
https://www.ncbi.nlm.nih.gov/pubmed/28228004
http://dx.doi.org/10.1186/s11671-017-1905-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5311009/
https://www.ncbi.nlm.nih.gov/pubmed/28228004
http://dx.doi.org/10.1186/s11671-017-1905-3

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