Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors

In this study, the integration of SiGe selective epitaxy on source/drain regions and high-k and metal gate for 22 nm node bulk pMOS transistors has been presented. Selective Si(1-x)Ge(x) growth (0.35 ≤ × ≤ 0.40) with boron concentration of 1–3 × 10(20) cm(−3) was used to elevate the source/drain. Th...

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Detalles Bibliográficos
Autores principales: Wang, Guilei, Luo, Jun, Qin, Changliang, Liang, Renrong, Xu, Yefeng, Liu, Jinbiao, Li, Junfeng, Yin, Huaxiang, Yan, Jiang, Zhu, Huilong, Xu, Jun, Zhao, Chao, Radamson, Henry H., Ye, Tianchun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5313396/
https://www.ncbi.nlm.nih.gov/pubmed/28228008
http://dx.doi.org/10.1186/s11671-017-1908-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5313396/
https://www.ncbi.nlm.nih.gov/pubmed/28228008
http://dx.doi.org/10.1186/s11671-017-1908-0

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