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Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors
In this study, the integration of SiGe selective epitaxy on source/drain regions and high-k and metal gate for 22 nm node bulk pMOS transistors has been presented. Selective Si(1-x)Ge(x) growth (0.35 ≤ × ≤ 0.40) with boron concentration of 1–3 × 10(20) cm(−3) was used to elevate the source/drain. Th...
| Autores principales: | , , , , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5313396/ https://www.ncbi.nlm.nih.gov/pubmed/28228008 http://dx.doi.org/10.1186/s11671-017-1908-0 |