Gate-controlled conductance enhancement from quantum Hall channels along graphene p–n junctions

The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p–n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to the new conducting channels formed...

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Detalles Bibliográficos
Autores principales: Tóvári, Endre, Makk, Péter, Liu, Ming-Hao, Rickhaus, Peter, Kovács-Krausz, Zoltán, Richter, Klaus, Schönenberger, Christian, Csonka, Szabolcs
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Royal Society of Chemistry 2016
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5315021/
https://www.ncbi.nlm.nih.gov/pubmed/27878177
http://dx.doi.org/10.1039/c6nr05100f

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5315021/
https://www.ncbi.nlm.nih.gov/pubmed/27878177
http://dx.doi.org/10.1039/c6nr05100f

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