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Gate-controlled conductance enhancement from quantum Hall channels along graphene p–n junctions
The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p–n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to the new conducting channels formed...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Royal Society of Chemistry
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5315021/ https://www.ncbi.nlm.nih.gov/pubmed/27878177 http://dx.doi.org/10.1039/c6nr05100f |
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author | Tóvári, Endre Makk, Péter Liu, Ming-Hao Rickhaus, Peter Kovács-Krausz, Zoltán Richter, Klaus Schönenberger, Christian Csonka, Szabolcs |
author_facet | Tóvári, Endre Makk, Péter Liu, Ming-Hao Rickhaus, Peter Kovács-Krausz, Zoltán Richter, Klaus Schönenberger, Christian Csonka, Szabolcs |
author_sort | Tóvári, Endre |
collection | PubMed |
description | The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p–n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to the new conducting channels formed in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are determined by the gate-controlled filling factor across the device. This effect could be exploited to probe the behavior and interaction of quantum Hall channels protected against uncontrolled scattering at the edges. |
format | Online Article Text |
id | pubmed-5315021 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Royal Society of Chemistry |
record_format | MEDLINE/PubMed |
spelling | pubmed-53150212017-03-01 Gate-controlled conductance enhancement from quantum Hall channels along graphene p–n junctions Tóvári, Endre Makk, Péter Liu, Ming-Hao Rickhaus, Peter Kovács-Krausz, Zoltán Richter, Klaus Schönenberger, Christian Csonka, Szabolcs Nanoscale Chemistry The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p–n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to the new conducting channels formed in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are determined by the gate-controlled filling factor across the device. This effect could be exploited to probe the behavior and interaction of quantum Hall channels protected against uncontrolled scattering at the edges. Royal Society of Chemistry 2016-12-21 2016-10-31 /pmc/articles/PMC5315021/ /pubmed/27878177 http://dx.doi.org/10.1039/c6nr05100f Text en This journal is © The Royal Society of Chemistry 2016 http://creativecommons.org/licenses/by/3.0/ This is an Open Access article distributed under the terms of the Creative Commons Attribution 3.0 Unported License (http://creativecommons.org/licenses/by/3.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Chemistry Tóvári, Endre Makk, Péter Liu, Ming-Hao Rickhaus, Peter Kovács-Krausz, Zoltán Richter, Klaus Schönenberger, Christian Csonka, Szabolcs Gate-controlled conductance enhancement from quantum Hall channels along graphene p–n junctions |
title | Gate-controlled conductance enhancement from quantum Hall channels along graphene p–n junctions |
title_full | Gate-controlled conductance enhancement from quantum Hall channels along graphene p–n junctions |
title_fullStr | Gate-controlled conductance enhancement from quantum Hall channels along graphene p–n junctions |
title_full_unstemmed | Gate-controlled conductance enhancement from quantum Hall channels along graphene p–n junctions |
title_short | Gate-controlled conductance enhancement from quantum Hall channels along graphene p–n junctions |
title_sort | gate-controlled conductance enhancement from quantum hall channels along graphene p–n junctions |
topic | Chemistry |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5315021/ https://www.ncbi.nlm.nih.gov/pubmed/27878177 http://dx.doi.org/10.1039/c6nr05100f |
work_keys_str_mv | AT tovariendre gatecontrolledconductanceenhancementfromquantumhallchannelsalonggraphenepnjunctions AT makkpeter gatecontrolledconductanceenhancementfromquantumhallchannelsalonggraphenepnjunctions AT liuminghao gatecontrolledconductanceenhancementfromquantumhallchannelsalonggraphenepnjunctions AT rickhauspeter gatecontrolledconductanceenhancementfromquantumhallchannelsalonggraphenepnjunctions AT kovacskrauszzoltan gatecontrolledconductanceenhancementfromquantumhallchannelsalonggraphenepnjunctions AT richterklaus gatecontrolledconductanceenhancementfromquantumhallchannelsalonggraphenepnjunctions AT schonenbergerchristian gatecontrolledconductanceenhancementfromquantumhallchannelsalonggraphenepnjunctions AT csonkaszabolcs gatecontrolledconductanceenhancementfromquantumhallchannelsalonggraphenepnjunctions |