Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications

Complementary power field effect transistors (FETs) based on wide bandgap materials not only provide high-voltage switching capability with the reduction of on-resistance and switching losses, but also enable a smart inverter system by the dramatic simplification of external circuits. However, p-cha...

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Detalles Bibliográficos
Autores principales: Kawarada, Hiroshi, Yamada, Tetsuya, Xu, Dechen, Tsuboi, Hidetoshi, Kitabayashi, Yuya, Matsumura, Daisuke, Shibata, Masanobu, Kudo, Takuya, Inaba, Masafumi, Hiraiwa, Atsushi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5316979/
https://www.ncbi.nlm.nih.gov/pubmed/28218234
http://dx.doi.org/10.1038/srep42368

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5316979/
https://www.ncbi.nlm.nih.gov/pubmed/28218234
http://dx.doi.org/10.1038/srep42368

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