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InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band
A new structure of 1.55-μm pillar cavity is proposed. Consisting of InP-air-aperture and InGaAsP layers, this cavity can be fabricated by using a monolithic process, which was difficult for previous 1.55-μm pillar cavities. Owing to the air apertures and tapered distributed Bragg reflectors, such a...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5318313/ https://www.ncbi.nlm.nih.gov/pubmed/28235366 http://dx.doi.org/10.1186/s11671-017-1898-y |