InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band

A new structure of 1.55-μm pillar cavity is proposed. Consisting of InP-air-aperture and InGaAsP layers, this cavity can be fabricated by using a monolithic process, which was difficult for previous 1.55-μm pillar cavities. Owing to the air apertures and tapered distributed Bragg reflectors, such a...

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Autores principales: Song, Hai-Zhi, Hadi, Mukhtar, Zheng, Yanzhen, Shen, Bizhou, Zhang, Lei, Ren, Zhilei, Gao, Ruoyao, Wang, Zhiming M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Commentary
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5318313/
https://www.ncbi.nlm.nih.gov/pubmed/28235366
http://dx.doi.org/10.1186/s11671-017-1898-y
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author Song, Hai-Zhi
Hadi, Mukhtar
Zheng, Yanzhen
Shen, Bizhou
Zhang, Lei
Ren, Zhilei
Gao, Ruoyao
Wang, Zhiming M.
author_facet Song, Hai-Zhi
Hadi, Mukhtar
Zheng, Yanzhen
Shen, Bizhou
Zhang, Lei
Ren, Zhilei
Gao, Ruoyao
Wang, Zhiming M.
author_sort Song, Hai-Zhi
collection PubMed
description A new structure of 1.55-μm pillar cavity is proposed. Consisting of InP-air-aperture and InGaAsP layers, this cavity can be fabricated by using a monolithic process, which was difficult for previous 1.55-μm pillar cavities. Owing to the air apertures and tapered distributed Bragg reflectors, such a pillar cavity with nanometer-scaled diameters can give a quality factor of 10(4)–10(5) at 1.55 μm. Capable of weakly and strongly coupling a single quantum dot with an optical mode, this nanocavity could be a prospective candidate for quantum-dot single-photon sources at 1.55-μm telecommunication band.
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spelling pubmed-53183132017-03-03 InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band Song, Hai-Zhi Hadi, Mukhtar Zheng, Yanzhen Shen, Bizhou Zhang, Lei Ren, Zhilei Gao, Ruoyao Wang, Zhiming M. Nanoscale Res Lett Nano Commentary A new structure of 1.55-μm pillar cavity is proposed. Consisting of InP-air-aperture and InGaAsP layers, this cavity can be fabricated by using a monolithic process, which was difficult for previous 1.55-μm pillar cavities. Owing to the air apertures and tapered distributed Bragg reflectors, such a pillar cavity with nanometer-scaled diameters can give a quality factor of 10(4)–10(5) at 1.55 μm. Capable of weakly and strongly coupling a single quantum dot with an optical mode, this nanocavity could be a prospective candidate for quantum-dot single-photon sources at 1.55-μm telecommunication band. Springer US 2017-02-20 /pmc/articles/PMC5318313/ /pubmed/28235366 http://dx.doi.org/10.1186/s11671-017-1898-y Text en © The Author(s). 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Commentary
Song, Hai-Zhi
Hadi, Mukhtar
Zheng, Yanzhen
Shen, Bizhou
Zhang, Lei
Ren, Zhilei
Gao, Ruoyao
Wang, Zhiming M.
InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band
title InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band
title_full InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band
title_fullStr InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band
title_full_unstemmed InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band
title_short InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band
title_sort ingaasp/inp nanocavity for single-photon source at 1.55-μm telecommunication band
topic Nano Commentary
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5318313/
https://www.ncbi.nlm.nih.gov/pubmed/28235366
http://dx.doi.org/10.1186/s11671-017-1898-y
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