Low-Temperature PLD-Growth of Ultrathin ZnO Nanowires by Using Zn(x)Al(1−x)O and Zn(x)Ga(1−x)O Seed Layers

ZnO nanowires (NWs) are used as building blocks for a wide range of different devices, e.g. light emitters, resonators, and sensors. Integration of the NWs into such structures requires a high level of NWs’ diameter control. Here, we present that the doping concentration of Zn(x)Al(1−x)O and Zn(x)Ga...

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Detalles Bibliográficos
Autores principales: Shkurmanov, Alexander, Sturm, Chris, Franke, Helena, Lenzner, Jörg, Grundmann, Marius
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5318314/
https://www.ncbi.nlm.nih.gov/pubmed/28235370
http://dx.doi.org/10.1186/s11671-017-1906-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5318314/
https://www.ncbi.nlm.nih.gov/pubmed/28235370
http://dx.doi.org/10.1186/s11671-017-1906-2

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