Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory

For the first time, the growth of Ni nanoparticles (NPs) was explored by plasma-assisted atomic layer deposition (ALD) technique using NiCp(2) and NH(3) precursors. Influences of substrate temperature and deposition cycles on ALD Ni NPs were studied by field emission scanning electron microscope and...

Descripción completa

Detalles Bibliográficos
Autores principales: Qian, Shi-Bing, Wang, Yong-Ping, Shao, Yan, Liu, Wen-Jun, Ding, Shi-Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5319931/
https://www.ncbi.nlm.nih.gov/pubmed/28235376
http://dx.doi.org/10.1186/s11671-017-1925-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5319931/
https://www.ncbi.nlm.nih.gov/pubmed/28235376
http://dx.doi.org/10.1186/s11671-017-1925-z

Ejemplares similares