Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells

This paper reports the transient photoluminescence (PL) properties of an InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) with green emission. Recombination of localized excitons was proved to be the main microscopic mechanism of green emission in the sample. The PL dynamics were asc...

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Detalles Bibliográficos
Autores principales: Lin, Tao, Kuo, Hao Chung, Jiang, Xiao Dong, Feng, Zhe Chuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5319940/
https://www.ncbi.nlm.nih.gov/pubmed/28235373
http://dx.doi.org/10.1186/s11671-017-1922-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5319940/
https://www.ncbi.nlm.nih.gov/pubmed/28235373
http://dx.doi.org/10.1186/s11671-017-1922-2

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