A solution-processed quaternary oxide system obtained at low-temperature using a vertical diffusion technique

We report a method for fabricating solution-processed quaternary In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) at low annealing temperatures using a vertical diffusion technique (VDT). The VDT is a deposition process for spin-coating binary and ternary oxide layers consecutively and annealing at on...

Descripción completa

Detalles Bibliográficos
Autores principales: Yoon, Seokhyun, Kim, Si Joon, Tak, Young Jun, Kim, Hyun Jae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5322350/
https://www.ncbi.nlm.nih.gov/pubmed/28230088
http://dx.doi.org/10.1038/srep43216

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5322350/
https://www.ncbi.nlm.nih.gov/pubmed/28230088
http://dx.doi.org/10.1038/srep43216

Ejemplares similares