The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications

We have conducted a series of measurements of resonantly excited photoluminescence, photocurrent and photovoltage on InGaN/GaN quantum wells with and without a p-n junction under reverse bias condition. The results indicate that most of the resonantly excited photo-generated carriers are extracted f...

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Detalles Bibliográficos
Autores principales: Yang, Haojun, Ma, Ziguang, Jiang, Yang, Wu, Haiyan, Zuo, Peng, Zhao, Bin, Jia, Haiqiang, Chen, Hong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5327382/
https://www.ncbi.nlm.nih.gov/pubmed/28240254
http://dx.doi.org/10.1038/srep43357

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5327382/
https://www.ncbi.nlm.nih.gov/pubmed/28240254
http://dx.doi.org/10.1038/srep43357

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