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The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications
We have conducted a series of measurements of resonantly excited photoluminescence, photocurrent and photovoltage on InGaN/GaN quantum wells with and without a p-n junction under reverse bias condition. The results indicate that most of the resonantly excited photo-generated carriers are extracted f...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5327382/ https://www.ncbi.nlm.nih.gov/pubmed/28240254 http://dx.doi.org/10.1038/srep43357 |