Properties of Doped GaSb Whiskers at Low Temperatures

Temperature dependencies of GaSb whiskers’ resistance doped with Te to concentration of 1.7 × 10(18) cm(−3) were measured in temperature range 1.5–300 K. At 4.2 K temperature, a sharp drop in the whisker resistance was found. The observed effect is likely connected with the contribution of two proce...

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Detalles Bibliográficos
Autores principales: Khytruk, Igor, Druzhinin, Anatoly, Ostrovskii, Igor, Khoverko, Yuriy, Liakh-Kaguy, Natalia, Rogacki, Krzysztof
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5328892/
https://www.ncbi.nlm.nih.gov/pubmed/28249370
http://dx.doi.org/10.1186/s11671-017-1923-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5328892/
https://www.ncbi.nlm.nih.gov/pubmed/28249370
http://dx.doi.org/10.1186/s11671-017-1923-1

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