Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics

[Image: see text] We perform a quantitative analysis of the trap density of states (trap DOS) in PbS quantum dot field-effect transistors (QD-FETs), which utilize several polymer gate insulators with a wide range of dielectric constants. With increasing gate dielectric constant, we observe increasin...

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Detalles Bibliográficos
Autores principales: Nugraha, Mohamad I., Häusermann, Roger, Watanabe, Shun, Matsui, Hiroyuki, Sytnyk, Mykhailo, Heiss, Wolfgang, Takeya, Jun, Loi, Maria A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5330653/
https://www.ncbi.nlm.nih.gov/pubmed/28084725
http://dx.doi.org/10.1021/acsami.6b14934

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5330653/
https://www.ncbi.nlm.nih.gov/pubmed/28084725
http://dx.doi.org/10.1021/acsami.6b14934

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