Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography

In this research, nano-ring light-emitting diodes (NRLEDs) with different wall width (120 nm, 80 nm and 40 nm) were fabricated by specialized nano-sphere lithography technology. Through the thinned wall, the effective bandgaps of nano-ring LEDs can be precisely tuned by reducing the strain inside th...

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Detalles Bibliográficos
Autores principales: Wang, Sheng-Wen, Hong, Kuo-Bin, Tsai, Yu-Lin, Teng, Chu-Hsiang, Tzou, An-Jye, Chu, You-Chen, Lee, Po-Tsung, Ku, Pei-Cheng, Lin, Chien-Chung, Kuo, Hao-Chung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5335604/
https://www.ncbi.nlm.nih.gov/pubmed/28256529
http://dx.doi.org/10.1038/srep42962

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5335604/
https://www.ncbi.nlm.nih.gov/pubmed/28256529
http://dx.doi.org/10.1038/srep42962

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