A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications

Reliability risks for two different types of through-silicon-vias (TSVs) are discussed in this paper. The first is a partially-filled copper TSV, if which the copper layer covers the side walls and bottom. A polymer is used to fill the rest of the cavity. Stresses in risk sites are studied and ranke...

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Detalles Bibliográficos
Autores principales: Shao, Shuai, Liu, Dapeng, Niu, Yuling, O’Donnell, Kathy, Sengupta, Dipak, Park, Seungbae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5336032/
https://www.ncbi.nlm.nih.gov/pubmed/28208758
http://dx.doi.org/10.3390/s17020322

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5336032/
https://www.ncbi.nlm.nih.gov/pubmed/28208758
http://dx.doi.org/10.3390/s17020322

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