Erratum to: The Influence of Hafnium Doping on Density-of-States in Zinc Oxide Thin-Film Fransistors Deposited Via Atomic Layer Deposition

Detalles Bibliográficos
Autores principales: Ding, Xingwei, Qin, Cunping, Song, Jiantao, Zhang, Jianhua, Jiang, Xueyin, Zhang, Zhilin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Erratum
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5340739/
https://www.ncbi.nlm.nih.gov/pubmed/28274091
http://dx.doi.org/10.1186/s11671-017-1927-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5340739/
https://www.ncbi.nlm.nih.gov/pubmed/28274091
http://dx.doi.org/10.1186/s11671-017-1927-x

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