Critical increase in Na-doping facilitates acceptor band movements that yields ~180 meV shallow hole conduction in ZnO bulk crystals

Stable p-type conduction in ZnO has been a long time obstacle in utilizing its full potential such as in opto-electronic devices. We designed a unique experimental set-up in the laboratory for high Na-doping by thermal diffusion in the bulk ZnO single crystals. SIMS measurement shows that Na concent...

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Detalles Bibliográficos
Autores principales: Parmar, Narendra S., Yim, Haena, Choi, Ji-Won
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5341155/
https://www.ncbi.nlm.nih.gov/pubmed/28272444
http://dx.doi.org/10.1038/srep44196

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5341155/
https://www.ncbi.nlm.nih.gov/pubmed/28272444
http://dx.doi.org/10.1038/srep44196

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