Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO(4) Charge-Trapping Layer

Crystalline ZrTiO(4) (ZTO) in orthorhombic phase with different plasma treatments was explored as the charge-trapping layer for low-voltage operation flash memory. For ZTO without any plasma treatment, even with a high k value of 45.2, it almost cannot store charges due the oxygen vacancies-induced...

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Detalles Bibliográficos
Autores principales: Shen, Yung-Shao, Chen, Kuen-Yi, Chen, Po-Chun, Chen, Teng-Chuan, Wu, Yung-Hsien
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5341567/
https://www.ncbi.nlm.nih.gov/pubmed/28272529
http://dx.doi.org/10.1038/srep43659

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5341567/
https://www.ncbi.nlm.nih.gov/pubmed/28272529
http://dx.doi.org/10.1038/srep43659

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