High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects

We report the demonstration of high-photoresponsivity Ge-dot photoMOSFETs in a standard MOS configuration for the detection of 850–1550 nm illumination. Each device has a self-organized, gate-stacking heterostructure of SiO(2)/Ge-dot/SiO(2)/SiGe-channel which is simultaneously fabricated in a single...

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Detalles Bibliográficos
Autores principales: Kuo, Ming-Hao, Lee, Meng-Chun, Lin, Horng-Chih, George, Tom, Li, Pei-Wen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5353644/
https://www.ncbi.nlm.nih.gov/pubmed/28300145
http://dx.doi.org/10.1038/srep44402

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5353644/
https://www.ncbi.nlm.nih.gov/pubmed/28300145
http://dx.doi.org/10.1038/srep44402

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