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High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects
We report the demonstration of high-photoresponsivity Ge-dot photoMOSFETs in a standard MOS configuration for the detection of 850–1550 nm illumination. Each device has a self-organized, gate-stacking heterostructure of SiO(2)/Ge-dot/SiO(2)/SiGe-channel which is simultaneously fabricated in a single...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5353644/ https://www.ncbi.nlm.nih.gov/pubmed/28300145 http://dx.doi.org/10.1038/srep44402 |
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author | Kuo, Ming-Hao Lee, Meng-Chun Lin, Horng-Chih George, Tom Li, Pei-Wen |
author_facet | Kuo, Ming-Hao Lee, Meng-Chun Lin, Horng-Chih George, Tom Li, Pei-Wen |
author_sort | Kuo, Ming-Hao |
collection | PubMed |
description | We report the demonstration of high-photoresponsivity Ge-dot photoMOSFETs in a standard MOS configuration for the detection of 850–1550 nm illumination. Each device has a self-organized, gate-stacking heterostructure of SiO(2)/Ge-dot/SiO(2)/SiGe-channel which is simultaneously fabricated in a single oxidation step. Superior control of the geometrical size and chemical composition for our Ge nanodots/SiO(2)/Si(1-x)Ge(x)-shell MOS structure enables the practically-achievable, gate-stacking design for our Ge-dot photoMOSFETs. Both the gate oxide thickness and the diameter of the Ge dots are controllable. Large photocurrent enhancement was achieved for our Ge-dot photoMOSFETs when electrically-biased at ON- and OFF-states based on the Ge dot mediating photovoltaic and photoconductive effects, respectively. Both photoelectric conversion efficiency and response speed are significantly improved by reducing the gate-oxide thickness from 38.5 nm to 3.5 nm, and by decreasing Ge-dot size from 90 nm to 50 nm for a given areal density of Ge dots. Photoresponsivity ([Image: see text]) values as high as 1.2 × 10(4) A/W and 300 A/W are measured for 10 nW illumination at 850 nm and 1550 nm, respectively. A response time of 0.48 ns and a 3 dB-frequency of 2 GHz were achieved for 50 nm-Ge-dot photoMOSFETs with channel lengths of 3 μm under pulsed 850 nm illumination. |
format | Online Article Text |
id | pubmed-5353644 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-53536442017-03-20 High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects Kuo, Ming-Hao Lee, Meng-Chun Lin, Horng-Chih George, Tom Li, Pei-Wen Sci Rep Article We report the demonstration of high-photoresponsivity Ge-dot photoMOSFETs in a standard MOS configuration for the detection of 850–1550 nm illumination. Each device has a self-organized, gate-stacking heterostructure of SiO(2)/Ge-dot/SiO(2)/SiGe-channel which is simultaneously fabricated in a single oxidation step. Superior control of the geometrical size and chemical composition for our Ge nanodots/SiO(2)/Si(1-x)Ge(x)-shell MOS structure enables the practically-achievable, gate-stacking design for our Ge-dot photoMOSFETs. Both the gate oxide thickness and the diameter of the Ge dots are controllable. Large photocurrent enhancement was achieved for our Ge-dot photoMOSFETs when electrically-biased at ON- and OFF-states based on the Ge dot mediating photovoltaic and photoconductive effects, respectively. Both photoelectric conversion efficiency and response speed are significantly improved by reducing the gate-oxide thickness from 38.5 nm to 3.5 nm, and by decreasing Ge-dot size from 90 nm to 50 nm for a given areal density of Ge dots. Photoresponsivity ([Image: see text]) values as high as 1.2 × 10(4) A/W and 300 A/W are measured for 10 nW illumination at 850 nm and 1550 nm, respectively. A response time of 0.48 ns and a 3 dB-frequency of 2 GHz were achieved for 50 nm-Ge-dot photoMOSFETs with channel lengths of 3 μm under pulsed 850 nm illumination. Nature Publishing Group 2017-03-16 /pmc/articles/PMC5353644/ /pubmed/28300145 http://dx.doi.org/10.1038/srep44402 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Kuo, Ming-Hao Lee, Meng-Chun Lin, Horng-Chih George, Tom Li, Pei-Wen High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects |
title | High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects |
title_full | High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects |
title_fullStr | High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects |
title_full_unstemmed | High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects |
title_short | High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects |
title_sort | high photoresponsivity ge-dot photomosfets for low-power monolithically-integrated si optical interconnects |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5353644/ https://www.ncbi.nlm.nih.gov/pubmed/28300145 http://dx.doi.org/10.1038/srep44402 |
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