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High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects
We report the demonstration of high-photoresponsivity Ge-dot photoMOSFETs in a standard MOS configuration for the detection of 850–1550 nm illumination. Each device has a self-organized, gate-stacking heterostructure of SiO(2)/Ge-dot/SiO(2)/SiGe-channel which is simultaneously fabricated in a single...
Autores principales: | Kuo, Ming-Hao, Lee, Meng-Chun, Lin, Horng-Chih, George, Tom, Li, Pei-Wen |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5353644/ https://www.ncbi.nlm.nih.gov/pubmed/28300145 http://dx.doi.org/10.1038/srep44402 |
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