Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV...

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Detalles Bibliográficos
Autores principales: Hu, Hongpo, Zhou, Shengjun, Liu, Xingtong, Gao, Yilin, Gui, Chengqun, Liu, Sheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5353678/
https://www.ncbi.nlm.nih.gov/pubmed/28294166
http://dx.doi.org/10.1038/srep44627

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5353678/
https://www.ncbi.nlm.nih.gov/pubmed/28294166
http://dx.doi.org/10.1038/srep44627

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