Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate

In this paper, a new Si/SiGe heterojunction tunneling field-effect transistor with a T-shaped gate (HTG-TFET) is proposed and investigated by Silvaco-Atlas simulation. The two source regions of the HTG-TFET are placed on both sides of the gate to increase the tunneling area. The T-shaped gate is des...

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Detalles Bibliográficos
Autores principales: Li, Wei, Liu, Hongxia, Wang, Shulong, Chen, Shupeng, Yang, Zhaonian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5355408/
https://www.ncbi.nlm.nih.gov/pubmed/28314362
http://dx.doi.org/10.1186/s11671-017-1958-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5355408/
https://www.ncbi.nlm.nih.gov/pubmed/28314362
http://dx.doi.org/10.1186/s11671-017-1958-3

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