Enhanced Telecom Emission from Single Group-IV Quantum Dots by Precise CMOS-Compatible Positioning in Photonic Crystal Cavities

[Image: see text] Efficient coupling to integrated high-quality-factor cavities is crucial for the employment of germanium quantum dot (QD) emitters in future monolithic silicon-based optoelectronic platforms. We report on strongly enhanced emission from single Ge QDs into L3 photonic crystal resona...

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Detalles Bibliográficos
Autores principales: Schatzl, Magdalena, Hackl, Florian, Glaser, Martin, Rauter, Patrick, Brehm, Moritz, Spindlberger, Lukas, Simbula, Angelica, Galli, Matteo, Fromherz, Thomas, Schäffler, Friedrich
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5355891/
https://www.ncbi.nlm.nih.gov/pubmed/28345012
http://dx.doi.org/10.1021/acsphotonics.6b01045

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5355891/
https://www.ncbi.nlm.nih.gov/pubmed/28345012
http://dx.doi.org/10.1021/acsphotonics.6b01045

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