Resistive switching mechanism in the one diode-one resistor memory based on p(+)-Si/n-ZnO heterostructure revealed by in-situ TEM

One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p(+)-Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multil...

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Detalles Bibliográficos
Autores principales: Zhang, Lei, Zhu, Liang, Li, Xiaomei, Xu, Zhi, Wang, Wenlong, Bai, Xuedong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5359668/
https://www.ncbi.nlm.nih.gov/pubmed/28322336
http://dx.doi.org/10.1038/srep45143

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5359668/
https://www.ncbi.nlm.nih.gov/pubmed/28322336
http://dx.doi.org/10.1038/srep45143

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