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Resistive switching mechanism in the one diode-one resistor memory based on p(+)-Si/n-ZnO heterostructure revealed by in-situ TEM

One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p(+)-Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multil...

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Detalles Bibliográficos
Autores principales: Zhang, Lei, Zhu, Liang, Li, Xiaomei, Xu, Zhi, Wang, Wenlong, Bai, Xuedong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5359668/
https://www.ncbi.nlm.nih.gov/pubmed/28322336
http://dx.doi.org/10.1038/srep45143
_version_ 1782516420563697664
author Zhang, Lei
Zhu, Liang
Li, Xiaomei
Xu, Zhi
Wang, Wenlong
Bai, Xuedong
author_facet Zhang, Lei
Zhu, Liang
Li, Xiaomei
Xu, Zhi
Wang, Wenlong
Bai, Xuedong
author_sort Zhang, Lei
collection PubMed
description One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p(+)-Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.
format Online
Article
Text
id pubmed-5359668
institution National Center for Biotechnology Information
language English
publishDate 2017
publisher Nature Publishing Group
record_format MEDLINE/PubMed
spelling pubmed-53596682017-03-22 Resistive switching mechanism in the one diode-one resistor memory based on p(+)-Si/n-ZnO heterostructure revealed by in-situ TEM Zhang, Lei Zhu, Liang Li, Xiaomei Xu, Zhi Wang, Wenlong Bai, Xuedong Sci Rep Article One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p(+)-Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization. Nature Publishing Group 2017-03-21 /pmc/articles/PMC5359668/ /pubmed/28322336 http://dx.doi.org/10.1038/srep45143 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Zhang, Lei
Zhu, Liang
Li, Xiaomei
Xu, Zhi
Wang, Wenlong
Bai, Xuedong
Resistive switching mechanism in the one diode-one resistor memory based on p(+)-Si/n-ZnO heterostructure revealed by in-situ TEM
title Resistive switching mechanism in the one diode-one resistor memory based on p(+)-Si/n-ZnO heterostructure revealed by in-situ TEM
title_full Resistive switching mechanism in the one diode-one resistor memory based on p(+)-Si/n-ZnO heterostructure revealed by in-situ TEM
title_fullStr Resistive switching mechanism in the one diode-one resistor memory based on p(+)-Si/n-ZnO heterostructure revealed by in-situ TEM
title_full_unstemmed Resistive switching mechanism in the one diode-one resistor memory based on p(+)-Si/n-ZnO heterostructure revealed by in-situ TEM
title_short Resistive switching mechanism in the one diode-one resistor memory based on p(+)-Si/n-ZnO heterostructure revealed by in-situ TEM
title_sort resistive switching mechanism in the one diode-one resistor memory based on p(+)-si/n-zno heterostructure revealed by in-situ tem
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5359668/
https://www.ncbi.nlm.nih.gov/pubmed/28322336
http://dx.doi.org/10.1038/srep45143
work_keys_str_mv AT zhanglei resistiveswitchingmechanismintheonediodeoneresistormemorybasedonpsinznoheterostructurerevealedbyinsitutem
AT zhuliang resistiveswitchingmechanismintheonediodeoneresistormemorybasedonpsinznoheterostructurerevealedbyinsitutem
AT lixiaomei resistiveswitchingmechanismintheonediodeoneresistormemorybasedonpsinznoheterostructurerevealedbyinsitutem
AT xuzhi resistiveswitchingmechanismintheonediodeoneresistormemorybasedonpsinznoheterostructurerevealedbyinsitutem
AT wangwenlong resistiveswitchingmechanismintheonediodeoneresistormemorybasedonpsinznoheterostructurerevealedbyinsitutem
AT baixuedong resistiveswitchingmechanismintheonediodeoneresistormemorybasedonpsinznoheterostructurerevealedbyinsitutem