Cargando…
Resistive switching mechanism in the one diode-one resistor memory based on p(+)-Si/n-ZnO heterostructure revealed by in-situ TEM
One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p(+)-Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multil...
Autores principales: | Zhang, Lei, Zhu, Liang, Li, Xiaomei, Xu, Zhi, Wang, Wenlong, Bai, Xuedong |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5359668/ https://www.ncbi.nlm.nih.gov/pubmed/28322336 http://dx.doi.org/10.1038/srep45143 |
Ejemplares similares
-
Fabrication and sensing behavior of one-dimensional ZnO-Zn(2)GeO(4) heterostructures
por: Liang, Yuan-Chang, et al.
Publicado: (2014) -
White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode
por: Sadaf, JR, et al.
Publicado: (2010) -
TEM
Nanostructural Investigation of Ag-Conductive
Filaments in Polycrystalline ZnO-Based Resistive Switching Devices
por: Bejtka, Katarzyna, et al.
Publicado: (2020) -
Reversible Barrier Switching of ZnO/RuO(2) Schottky Diodes
por: Wendel, Philipp, et al.
Publicado: (2021) -
Individual Zn(2)SnO(4)-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states
por: Cheng, Baochang, et al.
Publicado: (2013)