Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO(2)/Pt Resistive Switching Memory

Conductive bridge random access memory (CBRAM) has been extensively studied as a next-generation non-volatile memory. The conductive filament (CF) shows rich physical effects such as conductance quantization and magnetic effect. But so far, the study of filaments is not very sufficient. In this work...

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Detalles Bibliográficos
Autores principales: Li, Leilei, Liu, Yang, Teng, Jiao, Long, Shibing, Guo, Qixun, Zhang, Meiyun, Wu, Yu, Yu, Guanghua, Liu, Qi, Lv, Hangbing, Liu, Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5362562/
https://www.ncbi.nlm.nih.gov/pubmed/28335585
http://dx.doi.org/10.1186/s11671-017-1983-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5362562/
https://www.ncbi.nlm.nih.gov/pubmed/28335585
http://dx.doi.org/10.1186/s11671-017-1983-2

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