Quantitative strain analysis of InAs/GaAs quantum dot materials

Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattic...

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Detalles Bibliográficos
Autores principales: Vullum, Per Erik, Nord, Magnus, Vatanparast, Maryam, Thomassen, Sedsel Fretheim, Boothroyd, Chris, Holmestad, Randi, Fimland, Bjørn-Ove, Reenaas, Turid Worren
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5368971/
https://www.ncbi.nlm.nih.gov/pubmed/28349927
http://dx.doi.org/10.1038/srep45376

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5368971/
https://www.ncbi.nlm.nih.gov/pubmed/28349927
http://dx.doi.org/10.1038/srep45376

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