Quantitative strain analysis of InAs/GaAs quantum dot materials

Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattic...

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Autores principales: Vullum, Per Erik, Nord, Magnus, Vatanparast, Maryam, Thomassen, Sedsel Fretheim, Boothroyd, Chris, Holmestad, Randi, Fimland, Bjørn-Ove, Reenaas, Turid Worren
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5368971/
https://www.ncbi.nlm.nih.gov/pubmed/28349927
http://dx.doi.org/10.1038/srep45376
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author Vullum, Per Erik
Nord, Magnus
Vatanparast, Maryam
Thomassen, Sedsel Fretheim
Boothroyd, Chris
Holmestad, Randi
Fimland, Bjørn-Ove
Reenaas, Turid Worren
author_facet Vullum, Per Erik
Nord, Magnus
Vatanparast, Maryam
Thomassen, Sedsel Fretheim
Boothroyd, Chris
Holmestad, Randi
Fimland, Bjørn-Ove
Reenaas, Turid Worren
author_sort Vullum, Per Erik
collection PubMed
description Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattice in a wide region that extends several nm into the GaAs spacer layer below and above the QDs. Finally, we show how V-shaped dislocations originating at the QD/GaAs interface efficiently remove most of the lattice mismatch induced tetragonal distortions in and around the QD.
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spelling pubmed-53689712017-03-30 Quantitative strain analysis of InAs/GaAs quantum dot materials Vullum, Per Erik Nord, Magnus Vatanparast, Maryam Thomassen, Sedsel Fretheim Boothroyd, Chris Holmestad, Randi Fimland, Bjørn-Ove Reenaas, Turid Worren Sci Rep Article Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattice in a wide region that extends several nm into the GaAs spacer layer below and above the QDs. Finally, we show how V-shaped dislocations originating at the QD/GaAs interface efficiently remove most of the lattice mismatch induced tetragonal distortions in and around the QD. Nature Publishing Group 2017-03-28 /pmc/articles/PMC5368971/ /pubmed/28349927 http://dx.doi.org/10.1038/srep45376 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Vullum, Per Erik
Nord, Magnus
Vatanparast, Maryam
Thomassen, Sedsel Fretheim
Boothroyd, Chris
Holmestad, Randi
Fimland, Bjørn-Ove
Reenaas, Turid Worren
Quantitative strain analysis of InAs/GaAs quantum dot materials
title Quantitative strain analysis of InAs/GaAs quantum dot materials
title_full Quantitative strain analysis of InAs/GaAs quantum dot materials
title_fullStr Quantitative strain analysis of InAs/GaAs quantum dot materials
title_full_unstemmed Quantitative strain analysis of InAs/GaAs quantum dot materials
title_short Quantitative strain analysis of InAs/GaAs quantum dot materials
title_sort quantitative strain analysis of inas/gaas quantum dot materials
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5368971/
https://www.ncbi.nlm.nih.gov/pubmed/28349927
http://dx.doi.org/10.1038/srep45376
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