Cargando…

Quantitative strain analysis of InAs/GaAs quantum dot materials

Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattic...

Descripción completa

Detalles Bibliográficos
Autores principales:	Vullum, Per Erik, Nord, Magnus, Vatanparast, Maryam, Thomassen, Sedsel Fretheim, Boothroyd, Chris, Holmestad, Randi, Fimland, Bjørn-Ove, Reenaas, Turid Worren
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5368971/ https://www.ncbi.nlm.nih.gov/pubmed/28349927 http://dx.doi.org/10.1038/srep45376

Ejemplares similares

Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
por: Golovynskyi, Sergii, et al.
Publicado: (2017)

Evolution of wetting layer in InAs/GaAs quantum dot system
por: Chen, YH, et al.
Publicado: (2006)

Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots
por: Dai, Liping, et al.
Publicado: (2014)

Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation
por: Hussain, Sajid, et al.
Publicado: (2016)

Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
por: Maximov, Mikhail V, et al.
Publicado: (2014)

Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots
por: Kiravittaya, S, et al.
Publicado: (2006)

Photoluminescence of InAs/GaAs quantum dots under direct two-photon excitation
por: Hu, Xian, et al.
Publicado: (2020)

Phonon Transport in GaAs and InAs Twinning Superlattices
por: López-Güell, Kim, et al.
Publicado: (2022)

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
por: Strom, NW, et al.
Publicado: (2007)

The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs
por: Tommila, Juha, et al.
Publicado: (2012)

Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems
por: Dai, Liping, et al.
Publicado: (2015)

Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position
por: Souaf, Manel, et al.
Publicado: (2015)

Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure
por: Zhou, Xiaolong, et al.
Publicado: (2011)

Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate
por: Azeza, Bilel, et al.
Publicado: (2015)

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
por: Liu, Yao, et al.
Publicado: (2015)

Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy
por: Wang, L, et al.
Publicado: (2006)

Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth
por: Helfrich, Mathieu, et al.
Publicado: (2011)

Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
por: Chen, Zi-Bin, et al.
Publicado: (2012)

Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice
por: Sobolev, Mikhail, et al.
Publicado: (2012)

Spatial regularity of InAs-GaAs quantum dots: quantifying the dependence of lateral ordering on growth rate
por: Konishi, T., et al.
Publicado: (2017)

InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods
por: Zhukov, Alexey E., et al.
Publicado: (2020)

Atomap: a new software tool for the automated analysis of atomic resolution images using two-dimensional Gaussian fitting
por: Nord, Magnus, et al.
Publicado: (2017)

Effects of annealing on performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators
por: Lee, Shuh Ying, et al.
Publicado: (2013)

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
por: Su, Xiang-Bin, et al.
Publicado: (2018)

Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
por: Liang, BL, et al.
Publicado: (2007)

Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
por: Zhang, Hongyi, et al.
Publicado: (2012)

Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces
por: Milekhin, Alexander, et al.
Publicado: (2012)

Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode
por: Li, Shulun, et al.
Publicado: (2020)

Angle-dependent magnetotransport in GaAs/InAs core/shell nanowires
por: Haas, Fabian, et al.
Publicado: (2016)

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer
por: Utrilla, Antonio D, et al.
Publicado: (2014)

Infrared photodetector sensitized by InAs quantum dots embedded near an Al(0.3)Ga(0.7)As/GaAs heterointerface
por: Murata, Takahiko, et al.
Publicado: (2020)

1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser
por: Zhang, Z. Y., et al.
Publicado: (2012)

Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot
por: Ameen, Tarek A, et al.
Publicado: (2018)

Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
por: Bietti, Sergio, et al.
Publicado: (2015)

Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography
por: Ilahi, Bouraoui, et al.
Publicado: (2016)

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon
por: Xu, Buqing, et al.
Publicado: (2022)

Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
por: Paladugu, M, et al.
Publicado: (2009)

Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices
por: Golovynskyi, Sergii, et al.
Publicado: (2017)

The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene
por: Liudi Mulyo, Andreas, et al.
Publicado: (2020)

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices
por: Sapienza, Luca, et al.
Publicado: (2017)

Cannot write session to /tmp/vufind_sessions/sess_nau30d1loiqqc4hbg7n1s81l1d