Structural Properties Characterized by the Film Thickness and Annealing Temperature for La(2)O(3) Films Grown by Atomic Layer Deposition

La(2)O(3) films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La(2)O(3) films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing tempera...

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Detalles Bibliográficos
Autores principales: Wang, Xing, Liu, Hongxia, Zhao, Lu, Fei, Chenxi, Feng, Xingyao, Chen, Shupeng, Wang, Yongte
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5371540/
https://www.ncbi.nlm.nih.gov/pubmed/28359142
http://dx.doi.org/10.1186/s11671-017-2018-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5371540/
https://www.ncbi.nlm.nih.gov/pubmed/28359142
http://dx.doi.org/10.1186/s11671-017-2018-8

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