Structural Properties Characterized by the Film Thickness and Annealing Temperature for La(2)O(3) Films Grown by Atomic Layer Deposition

La(2)O(3) films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La(2)O(3) films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La(2)O(3) films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La(2)O(3) films, the crystallized films were observed to be more unstable due to the hygroscopicity of La(2)O(3). Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La(2)O(3) films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.