Structural Properties Characterized by the Film Thickness and Annealing Temperature for La(2)O(3) Films Grown by Atomic Layer Deposition

La(2)O(3) films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La(2)O(3) films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing tempera...

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Autores principales: Wang, Xing, Liu, Hongxia, Zhao, Lu, Fei, Chenxi, Feng, Xingyao, Chen, Shupeng, Wang, Yongte
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5371540/
https://www.ncbi.nlm.nih.gov/pubmed/28359142
http://dx.doi.org/10.1186/s11671-017-2018-8
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author Wang, Xing
Liu, Hongxia
Zhao, Lu
Fei, Chenxi
Feng, Xingyao
Chen, Shupeng
Wang, Yongte
author_facet Wang, Xing
Liu, Hongxia
Zhao, Lu
Fei, Chenxi
Feng, Xingyao
Chen, Shupeng
Wang, Yongte
author_sort Wang, Xing
collection PubMed
description La(2)O(3) films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La(2)O(3) films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La(2)O(3) films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La(2)O(3) films, the crystallized films were observed to be more unstable due to the hygroscopicity of La(2)O(3). Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La(2)O(3) films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.
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spelling pubmed-53715402017-04-12 Structural Properties Characterized by the Film Thickness and Annealing Temperature for La(2)O(3) Films Grown by Atomic Layer Deposition Wang, Xing Liu, Hongxia Zhao, Lu Fei, Chenxi Feng, Xingyao Chen, Shupeng Wang, Yongte Nanoscale Res Lett Nano Express La(2)O(3) films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La(2)O(3) films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La(2)O(3) films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La(2)O(3) films, the crystallized films were observed to be more unstable due to the hygroscopicity of La(2)O(3). Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La(2)O(3) films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively. Springer US 2017-03-29 /pmc/articles/PMC5371540/ /pubmed/28359142 http://dx.doi.org/10.1186/s11671-017-2018-8 Text en © The Author(s). 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Wang, Xing
Liu, Hongxia
Zhao, Lu
Fei, Chenxi
Feng, Xingyao
Chen, Shupeng
Wang, Yongte
Structural Properties Characterized by the Film Thickness and Annealing Temperature for La(2)O(3) Films Grown by Atomic Layer Deposition
title Structural Properties Characterized by the Film Thickness and Annealing Temperature for La(2)O(3) Films Grown by Atomic Layer Deposition
title_full Structural Properties Characterized by the Film Thickness and Annealing Temperature for La(2)O(3) Films Grown by Atomic Layer Deposition
title_fullStr Structural Properties Characterized by the Film Thickness and Annealing Temperature for La(2)O(3) Films Grown by Atomic Layer Deposition
title_full_unstemmed Structural Properties Characterized by the Film Thickness and Annealing Temperature for La(2)O(3) Films Grown by Atomic Layer Deposition
title_short Structural Properties Characterized by the Film Thickness and Annealing Temperature for La(2)O(3) Films Grown by Atomic Layer Deposition
title_sort structural properties characterized by the film thickness and annealing temperature for la(2)o(3) films grown by atomic layer deposition
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5371540/
https://www.ncbi.nlm.nih.gov/pubmed/28359142
http://dx.doi.org/10.1186/s11671-017-2018-8
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