Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness

Photoluminescence (PL) is investigated as a function of the excitation intensity and temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well thicknesses of 7 and 15 nm, respectively. At low temperature, interface fluctuations result in the 7-nm QW PL exhibiting a blueshi...

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Detalles Bibliográficos
Autores principales: Wang, Ying, Sheng, Xinzhi, Guo, Qinglin, Li, Xiaoli, Wang, Shufang, Fu, Guangsheng, Mazur, Yuriy I., Maidaniuk, Yurii, Ware, Morgan E., Salamo, Gregory J., Liang, Baolai, Huffaker, Diana L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5371541/
https://www.ncbi.nlm.nih.gov/pubmed/28359139
http://dx.doi.org/10.1186/s11671-017-1998-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5371541/
https://www.ncbi.nlm.nih.gov/pubmed/28359139
http://dx.doi.org/10.1186/s11671-017-1998-8

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