Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy

We performed depth-resolved PL and Raman spectral mappings of a GaN-based LED structure grown on a patterned sapphire substrate (PSS). Our results showed that the Raman mapping in the PSS-GaN heterointerface and the PL mapping in the In(x)Ga(1−x)N/GaN MQWs active layer are spatially correlated. Base...

Descripción completa

Detalles Bibliográficos
Autores principales: Li, Heng, Cheng, Hui-Yu, Chen, Wei-Liang, Huang, Yi-Hsin, Li, Chi-Kang, Chang, Chiao-Yun, Wu, Yuh-Renn, Lu, Tien-Chang, Chang, Yu-Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5371985/
https://www.ncbi.nlm.nih.gov/pubmed/28358119
http://dx.doi.org/10.1038/srep45519

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5371985/
https://www.ncbi.nlm.nih.gov/pubmed/28358119
http://dx.doi.org/10.1038/srep45519

Ejemplares similares