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Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy

We performed depth-resolved PL and Raman spectral mappings of a GaN-based LED structure grown on a patterned sapphire substrate (PSS). Our results showed that the Raman mapping in the PSS-GaN heterointerface and the PL mapping in the In(x)Ga(1−x)N/GaN MQWs active layer are spatially correlated. Base...

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Detalles Bibliográficos
Autores principales:	Li, Heng, Cheng, Hui-Yu, Chen, Wei-Liang, Huang, Yi-Hsin, Li, Chi-Kang, Chang, Chiao-Yun, Wu, Yuh-Renn, Lu, Tien-Chang, Chang, Yu-Ming
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5371985/ https://www.ncbi.nlm.nih.gov/pubmed/28358119 http://dx.doi.org/10.1038/srep45519

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