High-Q Wafer Level Package Based on Modified Tri-Layer Anodic Bonding and High Performance Getter and Its Evaluation for Micro Resonant Pressure Sensor

In order to achieve and maintain a high quality factor (high-Q) for the micro resonant pressure sensor, this paper presents a new wafer level package by adopting cross-layer anodic bonding technique of the glass/silicon/silica (GSS) stackable structure and integrated Ti getter. A double-layer struct...

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Detalles Bibliográficos
Autores principales: Wang, Liying, Du, Xiaohui, Wang, Lingyun, Xu, Zhanhao, Zhang, Chenying, Gu, Dandan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5375885/
https://www.ncbi.nlm.nih.gov/pubmed/28300752
http://dx.doi.org/10.3390/s17030599

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5375885/
https://www.ncbi.nlm.nih.gov/pubmed/28300752
http://dx.doi.org/10.3390/s17030599

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