Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED

For realizing next-generation solid-state lighting devices, performance breakthroughs must be accomplished for nitride-based light-emitting diodes (LEDs). Highly transparent conductive electrodes (TCEs) may be key to achieving this goal, as they provide uniform current injection and distribution acr...

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Autores principales: Kim, Su Jin, Kim, Hee-Dong, Kim, Kyeong Heon, Shin, Hee Woong, Han, Il Ki, Kim, Tae Geun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5376051/
https://www.ncbi.nlm.nih.gov/pubmed/25059757
http://dx.doi.org/10.1038/srep05827
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author Kim, Su Jin
Kim, Hee-Dong
Kim, Kyeong Heon
Shin, Hee Woong
Han, Il Ki
Kim, Tae Geun
author_facet Kim, Su Jin
Kim, Hee-Dong
Kim, Kyeong Heon
Shin, Hee Woong
Han, Il Ki
Kim, Tae Geun
author_sort Kim, Su Jin
collection PubMed
description For realizing next-generation solid-state lighting devices, performance breakthroughs must be accomplished for nitride-based light-emitting diodes (LEDs). Highly transparent conductive electrodes (TCEs) may be key to achieving this goal, as they provide uniform current injection and distribution across a large device area, eventually increasing the light output power. However, the trade-off between electrical conductivity and optical transmittance of LEDs must be addressed. Herein, we introduce a novel strategy based on TCEs fabricated using wide-bandgap (WB) materials such as SiN(x), incorporated beneath the n-type electrode of vertical-type LEDs, and show the feasibility of this strategy. We employ a novel electrical breakdown (EBD) technique to form conductive filaments (or current paths) between a TCE and n-GaN (GaN: gallium nitride). By employing the EBD process, we obtain both ohmic behavior for SiN(x) TCE/n-GaN and a current spreading effect across n-GaN. These results demonstrate the tremendous potential of WB-TCEs for use in high-performance optoelectronic devices.
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spelling pubmed-53760512017-04-03 Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED Kim, Su Jin Kim, Hee-Dong Kim, Kyeong Heon Shin, Hee Woong Han, Il Ki Kim, Tae Geun Sci Rep Article For realizing next-generation solid-state lighting devices, performance breakthroughs must be accomplished for nitride-based light-emitting diodes (LEDs). Highly transparent conductive electrodes (TCEs) may be key to achieving this goal, as they provide uniform current injection and distribution across a large device area, eventually increasing the light output power. However, the trade-off between electrical conductivity and optical transmittance of LEDs must be addressed. Herein, we introduce a novel strategy based on TCEs fabricated using wide-bandgap (WB) materials such as SiN(x), incorporated beneath the n-type electrode of vertical-type LEDs, and show the feasibility of this strategy. We employ a novel electrical breakdown (EBD) technique to form conductive filaments (or current paths) between a TCE and n-GaN (GaN: gallium nitride). By employing the EBD process, we obtain both ohmic behavior for SiN(x) TCE/n-GaN and a current spreading effect across n-GaN. These results demonstrate the tremendous potential of WB-TCEs for use in high-performance optoelectronic devices. Nature Publishing Group 2014-07-25 /pmc/articles/PMC5376051/ /pubmed/25059757 http://dx.doi.org/10.1038/srep05827 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-nd/4.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/4.0/
spellingShingle Article
Kim, Su Jin
Kim, Hee-Dong
Kim, Kyeong Heon
Shin, Hee Woong
Han, Il Ki
Kim, Tae Geun
Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED
title Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED
title_full Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED
title_fullStr Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED
title_full_unstemmed Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED
title_short Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED
title_sort fabrication of wide-bandgap transparent electrodes by using conductive filaments: performance breakthrough in vertical-type gan led
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5376051/
https://www.ncbi.nlm.nih.gov/pubmed/25059757
http://dx.doi.org/10.1038/srep05827
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