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Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED
For realizing next-generation solid-state lighting devices, performance breakthroughs must be accomplished for nitride-based light-emitting diodes (LEDs). Highly transparent conductive electrodes (TCEs) may be key to achieving this goal, as they provide uniform current injection and distribution acr...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5376051/ https://www.ncbi.nlm.nih.gov/pubmed/25059757 http://dx.doi.org/10.1038/srep05827 |
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author | Kim, Su Jin Kim, Hee-Dong Kim, Kyeong Heon Shin, Hee Woong Han, Il Ki Kim, Tae Geun |
author_facet | Kim, Su Jin Kim, Hee-Dong Kim, Kyeong Heon Shin, Hee Woong Han, Il Ki Kim, Tae Geun |
author_sort | Kim, Su Jin |
collection | PubMed |
description | For realizing next-generation solid-state lighting devices, performance breakthroughs must be accomplished for nitride-based light-emitting diodes (LEDs). Highly transparent conductive electrodes (TCEs) may be key to achieving this goal, as they provide uniform current injection and distribution across a large device area, eventually increasing the light output power. However, the trade-off between electrical conductivity and optical transmittance of LEDs must be addressed. Herein, we introduce a novel strategy based on TCEs fabricated using wide-bandgap (WB) materials such as SiN(x), incorporated beneath the n-type electrode of vertical-type LEDs, and show the feasibility of this strategy. We employ a novel electrical breakdown (EBD) technique to form conductive filaments (or current paths) between a TCE and n-GaN (GaN: gallium nitride). By employing the EBD process, we obtain both ohmic behavior for SiN(x) TCE/n-GaN and a current spreading effect across n-GaN. These results demonstrate the tremendous potential of WB-TCEs for use in high-performance optoelectronic devices. |
format | Online Article Text |
id | pubmed-5376051 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2014 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-53760512017-04-03 Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED Kim, Su Jin Kim, Hee-Dong Kim, Kyeong Heon Shin, Hee Woong Han, Il Ki Kim, Tae Geun Sci Rep Article For realizing next-generation solid-state lighting devices, performance breakthroughs must be accomplished for nitride-based light-emitting diodes (LEDs). Highly transparent conductive electrodes (TCEs) may be key to achieving this goal, as they provide uniform current injection and distribution across a large device area, eventually increasing the light output power. However, the trade-off between electrical conductivity and optical transmittance of LEDs must be addressed. Herein, we introduce a novel strategy based on TCEs fabricated using wide-bandgap (WB) materials such as SiN(x), incorporated beneath the n-type electrode of vertical-type LEDs, and show the feasibility of this strategy. We employ a novel electrical breakdown (EBD) technique to form conductive filaments (or current paths) between a TCE and n-GaN (GaN: gallium nitride). By employing the EBD process, we obtain both ohmic behavior for SiN(x) TCE/n-GaN and a current spreading effect across n-GaN. These results demonstrate the tremendous potential of WB-TCEs for use in high-performance optoelectronic devices. Nature Publishing Group 2014-07-25 /pmc/articles/PMC5376051/ /pubmed/25059757 http://dx.doi.org/10.1038/srep05827 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-nd/4.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/4.0/ |
spellingShingle | Article Kim, Su Jin Kim, Hee-Dong Kim, Kyeong Heon Shin, Hee Woong Han, Il Ki Kim, Tae Geun Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED |
title | Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED |
title_full | Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED |
title_fullStr | Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED |
title_full_unstemmed | Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED |
title_short | Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED |
title_sort | fabrication of wide-bandgap transparent electrodes by using conductive filaments: performance breakthrough in vertical-type gan led |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5376051/ https://www.ncbi.nlm.nih.gov/pubmed/25059757 http://dx.doi.org/10.1038/srep05827 |
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