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The microstructure of Si surface layers after plasma-immersion He(+) ion implantation and subsequent thermal annealing
The structural changes in the surface layer of p-type Cz-Si(001) samples after high-dose low-energy (2 keV) He(+) plasma-immersion ion implantation and subsequent thermal annealing were studied using a set of complementary methods: high-resolution X-ray reflectometry, high-resolution X-ray diffracti...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
International Union of Crystallography
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5377348/ https://www.ncbi.nlm.nih.gov/pubmed/28381978 http://dx.doi.org/10.1107/S1600576717003259 |