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Nondestructive X-ray diffraction measurement of warpage in silicon dies embedded in integrated circuit packages
Transmission X-ray diffraction imaging in both monochromatic and white beam section mode has been used to measure quantitatively the displacement and warpage stress in encapsulated silicon devices. The displacement dependence with position on the die was found to agree well with that predicted from...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
International Union of Crystallography
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5377349/ https://www.ncbi.nlm.nih.gov/pubmed/28381979 http://dx.doi.org/10.1107/S1600576717003132 |