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Effect of screw threading dislocations and inverse domain boundaries in GaN on the shape of reciprocal-space maps
The microstructure of polar GaN layers, grown by upgraded high-temperature vapour phase epitaxy on [001]-oriented sapphire substrates, was studied by means of high-resolution X-ray diffraction and transmission electron microscopy. Systematic differences between reciprocal-space maps measured by X-ra...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
International Union of Crystallography
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5377350/ https://www.ncbi.nlm.nih.gov/pubmed/28381980 http://dx.doi.org/10.1107/S1600576717003612 |