Low on-resistance diamond field effect transistor with high-k ZrO(2) as dielectric

Although several high-k insulators have been deposited on the diamond for metal-insulator-semiconductor field effect transistors (MISFETs) fabrication, the k values and current output are still not fully satisfactory. Here, we present a high-k ZrO(2) layer on the diamond for the MISFETs. The k value...

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Detalles Bibliográficos
Autores principales: Liu, Jiangwei, Liao, Meiyong, Imura, Masataka, Tanaka, Akihiro, Iwai, Hideo, Koide, Yasuo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5377369/
https://www.ncbi.nlm.nih.gov/pubmed/25242175
http://dx.doi.org/10.1038/srep06395

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5377369/
https://www.ncbi.nlm.nih.gov/pubmed/25242175
http://dx.doi.org/10.1038/srep06395

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