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Low on-resistance diamond field effect transistor with high-k ZrO(2) as dielectric
Although several high-k insulators have been deposited on the diamond for metal-insulator-semiconductor field effect transistors (MISFETs) fabrication, the k values and current output are still not fully satisfactory. Here, we present a high-k ZrO(2) layer on the diamond for the MISFETs. The k value...
Autores principales: | Liu, Jiangwei, Liao, Meiyong, Imura, Masataka, Tanaka, Akihiro, Iwai, Hideo, Koide, Yasuo |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2014
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5377369/ https://www.ncbi.nlm.nih.gov/pubmed/25242175 http://dx.doi.org/10.1038/srep06395 |
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