Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO(3) for low-power non-volatile memory and efficient ultraviolet ray detection

We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO(3)-xBiFeO(3) (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO(3) (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room...

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Detalles Bibliográficos
Autores principales: Kundu, Souvik, Clavel, Michael, Biswas, Pranab, Chen, Bo, Song, Hyun-Cheol, Kumar, Prashant, Halder, Nripendra N., Hudait, Mantu K., Banerji, Pallab, Sanghadasa, Mohan, Priya, Shashank
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5378894/
https://www.ncbi.nlm.nih.gov/pubmed/26202946
http://dx.doi.org/10.1038/srep12415

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5378894/
https://www.ncbi.nlm.nih.gov/pubmed/26202946
http://dx.doi.org/10.1038/srep12415

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